LP3000 Selling Leads, Price trend, LP3000 DataSheet download, circuit diagram from SeekIC.com

Features: · +33.5 dBm Typical Power at 18 GHz· 7 dB Typical Power Gain at 18 GHz· +30.5 dBm at 3.3V Battery Voltage· Low Intermodulation Distortion· 45% Power-Added-Efficiency at 18 GHzApplication`The LP3000 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic Hi...

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SeekIC No. : 004398749 Detail

LP3000: Features: · +33.5 dBm Typical Power at 18 GHz· 7 dB Typical Power Gain at 18 GHz· +30.5 dBm at 3.3V Battery Voltage· Low Intermodulation Distortion· 45% Power-Added-Efficiency at 18 GHzApplication`T...

LP3000 Data Sheet

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Part Number:: LP3000
Supply Ability:: 5000

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1~5000

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Upload time: 2024/12/25

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Product Details

Description

Features:

· +33.5 dBm Typical Power at 18 GHz
· 7 dB Typical Power Gain at 18 GHz
· +30.5 dBm at 3.3V Battery Voltage
· Low Intermodulation Distortion
· 45% Power-Added-Efficiency at 18 GHz

Application

`The LP3000 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron
Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 mm by 3000 mm Schottky barrier gate. The
recessed "mushroom" gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for reliable high-power applications. The LP3000 also features Si₃N₄passivation and is available with plated source via-holes (LPV 3000) as an option for improved high-frequency performance. Also available in a ceramic flanged package (P100) and ball grid array package.

`Typical applications include commercial and military high-performance power amplifiers, including SATCOM uplink
transmitters, PCS/Cellular low-voltage high-efficiency output amplifiers, and medium-haul digital radio transmitters. The LPV 3000/LP 3000 may be procured in a variety of grades, depending upon specific user requirements. Standard lot screening is patterned after MIL-STD-19500, JANC grade. Space-level screening to FSS JANS grade is also available.

Specifications

SYMBOL	PARAMETER	RATING¹
V_DS	Drain-Source Voltage	12V
V_GS	Gate-Source Voltage	-5V
I_DS	Drain-Source Current	2 x I_DSS
I_G	Gate Current	120 mA
P_IN	RF Input Power	1.2 W
T_CH	Channel Temperature	175
T_STG	Storage Temperature	-65/175
P_T	Power Dissipation	6.0W^3,4

1. Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device.
2. Recommended Continuous Operating Limits should be observed for reliable device operation.
3. Power Dissipation defined as: P_Tº (P_DC + P_IN) - P_OUT, where: P_DC = DC bias power, P_OUT = RF output power, and
P_IN = RF input power.
4. Power Dissipation to be de-rated as follows:
5. Specifications subject to change without notice.

Description

`The LP3000 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 mm by 3000 mm Schottky barrier gate. The recessed "mushroom" gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for reliable high-power applications. The LP3000 also features Si₃N₄ passivation and is available with plated source via-holes (LPV 3000) as an option for improved high-frequency performance. Also available in a ceramic flanged package (P100) and ball grid array package.

`Typical applications include commercial and military high-performance power amplifiers, including SATCOM uplink
transmitters, PCS/Cellular low-voltage high-efficiency output amplifiers, and medium-haul digital radio transmitters. The LPV 3000/LP 3000 may be procured in a variety of grades, depending upon specific user requirements. Standard lot screening is patterned after MIL-STD-19500, JANC grade. Space-level screening to FSS JANS grade is also available.

LP3000

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