LP3000

Features: · +33.5 dBm Typical Power at 18 GHz· 7 dB Typical Power Gain at 18 GHz· +30.5 dBm at 3.3V Battery Voltage· Low Intermodulation Distortion· 45% Power-Added-Efficiency at 18 GHzApplication`The LP3000 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic Hi...

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SeekIC No. : 004398749 Detail

LP3000: Features: · +33.5 dBm Typical Power at 18 GHz· 7 dB Typical Power Gain at 18 GHz· +30.5 dBm at 3.3V Battery Voltage· Low Intermodulation Distortion· 45% Power-Added-Efficiency at 18 GHzApplication`T...

floor Price/Ceiling Price

Part Number:
LP3000
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/6/3

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Product Details

Description



Features:

· +33.5 dBm Typical Power at 18 GHz
· 7 dB Typical Power Gain at 18 GHz
· +30.5 dBm at 3.3V Battery Voltage
· Low Intermodulation Distortion
· 45% Power-Added-Efficiency at 18 GHz



Application

`The LP3000 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron
Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 mm by 3000 mm Schottky barrier gate. The
recessed "mushroom" gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for reliable high-power applications. The LP3000 also features Si3N4 passivation and is available with plated source via-holes (LPV 3000) as an option for improved high-frequency performance. Also available in a ceramic flanged package (P100) and ball grid array package.

`Typical applications include commercial and military high-performance power amplifiers, including SATCOM uplink
transmitters, PCS/Cellular low-voltage high-efficiency output amplifiers, and medium-haul digital radio transmitters. The LPV 3000/LP 3000 may be procured in a variety of grades, depending upon specific user requirements. Standard lot screening is patterned after MIL-STD-19500, JANC grade. Space-level screening to FSS JANS grade is also available.



Specifications

SYMBOL

PARAMETER

RATING1

VDS

Drain-Source Voltage

12V

VGS

Gate-Source Voltage

-5V

IDS

Drain-Source Current

2 x IDSS

IG

Gate Current

120 mA

PIN

RF Input Power

1.2 W

TCH

Channel Temperature

175

TSTG

Storage Temperature

-65/175

PT

Power Dissipation

6.0W3,4

1. Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device.
2. Recommended Continuous Operating Limits should be observed for reliable device operation.
3. Power Dissipation defined as: PT º (PDC + PIN) - POUT, where: PDC = DC bias power, POUT = RF output power, and
PIN = RF input power.
4. Power Dissipation to be de-rated as follows:
5. Specifications subject to change without notice.



Description

`The LP3000 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 mm by 3000 mm Schottky barrier gate. The recessed "mushroom" gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for reliable high-power applications. The LP3000 also features Si3N4 passivation and is available with plated source via-holes (LPV 3000) as an option for improved high-frequency performance. Also available in a ceramic flanged package (P100) and ball grid array package.

`Typical applications include commercial and military high-performance power amplifiers, including SATCOM uplink
transmitters, PCS/Cellular low-voltage high-efficiency output amplifiers, and medium-haul digital radio transmitters. The LPV 3000/LP 3000 may be procured in a variety of grades, depending upon specific user requirements. Standard lot screening is patterned after MIL-STD-19500, JANC grade. Space-level screening to FSS JANS grade is also available.




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