LP3000SOT89

Features:

· 29 dBm Output Power at 1-dB Compression at 1.8 GHz
· 15 dB Power Gain at 1.8 GHz
· 1.3 dB Noise Figure
· 46 dBm Output IP3 at 1.8 GHz
· 55% Power-Added Efficiency


Application

·Applications Notes are available from your local Filtronic Sales Representative or directly from the factory. Complete design data, including S-parameters, noise data, and large-signal models are available on the Filtronic web site.


Specifications

Parameter	Symbol	Test Conditions		Max	Units
Drain-Source Voltage	VDS	TAmbient = 22 ± 3		7	V
Gate-Source Voltage	VGS	TAmbient = 22 ± 3		-4	V
Drain-Source Current	IDS	TAmbient = 22 ± 3		IDSS	mA
Gate Current	IG	TAmbient = 22 ± 3		30	mA
RF Input Power	PIN	TAmbient = 22 ± 3		1	W
Channel Operating Temperature	TCH	TAmbient = 22 ± 3	-65	175
Storage Temperature	TSTG	-		175
Total Power Dissipation	PTOT	TAmbient = 22 ± 3		3.75	W

Notes:
` Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device.
` Power Dissipation defined as: P_TOT º (P_DC + P_IN) P_OUT, where
                                                      P_DC: DC Bias Power
                                                      P_IN: RF Input Power
                                                      P_OUT: RF Output Power
` Absolute Maximum Power Dissipation to be de-rated as follows above 25°C:
                                                        P<sub>TOT</sub>= 3.75W (0.025W/°C) x T<sub>HS</sub>
                                                        where T<sub>PACK</sub> = source tab lead temperature..
` This PHEMT is susceptible to damage from Electrostatic Discharge. Proper precautions should be used when handling these devices.


Description

`The LP3000SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 mm x 3000 mm Schottky barrier gate, defined by electron-beam photolithography. The recessed "mushroom" gate structure minimizes parasitic gate-source and gate resistance. The epitaxial structure and processing have been optimized for reliable high-power applications. The LP3000 also features Si3N4 passivation and is available in die form or in other packages.

`Typical applications include PCS/Cellular low-voltage, high-efficiency amplifiers.