Position: Home  > All Categories> Integrated Circuits (ICs) > LP1500P100

LP1500P100

Features: · 31 dBm Output Power at 1-dB Compression at 15 GHz· 9 dB Power Gain at 15 GHz· 42 dBm Output IP3 at 15GHz· 60% Power-Added EfficiencySpecifications Parameter Symbol Test Conditions Min Max Units Drain-Source Voltage VDS TAmbient = 22 ± 3 12 V Gate-Source Voltage ...

product image

LP1500P100 Picture
See larger image
SeekIC No. : 004398649 Detail

LP1500P100: Features: · 31 dBm Output Power at 1-dB Compression at 15 GHz· 9 dB Power Gain at 15 GHz· 42 dBm Output IP3 at 15GHz· 60% Power-Added EfficiencySpecifications Parameter Symbol Test Conditions...

LP1500P100 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
LP1500P100
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/22

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

· 31 dBm Output Power at 1-dB Compression at 15 GHz
· 9 dB Power Gain at 15 GHz
· 42 dBm Output IP3 at 15GHz
· 60% Power-Added Efficiency


Specifications

Parameter Symbol Test Conditions Min Max Units
Drain-Source Voltage VDS TAmbient = 22 ± 3   12 V
Gate-Source Voltage VGS TAmbient = 22 ± 3   -4 V
Drain-Source Current IDS TAmbient = 22 ± 3   2xIDSS mA
Gate Current IG TAmbient = 22 ± 3   15 mA
RF Input Power PIN TAmbient = 22 ± 3   700 mW
Channel Operating Temperature TCH TAmbient = 22 ± 3   175
Storage Temperature TSTG - -65 175
Total Power Dissipation PTOT TAmbient = 22 ± 3   3.0 W
Notes:
` Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device.
` Power Dissipation defined as: PTOT º (PDC + PIN) POUT, where
                                                    PDC: DC Bias Power
                                                    PIN: RF Input Power
                                                    POUT: RF Output Power
` Absolute Maximum Power Dissipation to be de-rated as follows above 25:
                                                 PTOT= 3.0W (0.020W/) x THS
                                                 where THS = heatsink or ambient temperature.
` This PHEMT is susceptible to damage from Electrostatic Discharge. Proper precautions should be used when handling these devices.


Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Discrete Semiconductor Products
T508N12TOF
MUR20040
Batteries, Chargers, Holders
ICR18650-28A
ICR18650-26F/h
Switches
US32DMRJ
HBGQ22P-11ET
Cable Assemblies
CS1W-CN114
XW2Z-500T
Memory Cards, Modules
WT32
VTL5C7
Isolators
HCPL062N
HCPL316J
View more