LP1500

Features:

· 31.5 dBm Output Power at 1-dB Compression at 18 GHz
· 8 dB Power Gain at 18 GHz
· 28 dBm Output Power at 1-dB Compression at 3.3V
· 45dBm Output IP3 at 18GHz
· 50% Power-Added Efficiency


Specifications

Parameter	Symbol	Test Conditions	Min	Max	Units
Drain-Source Voltage	VDS	TAmbient = 22 ± 3		12	V
Gate-Source Voltage	VGS	TAmbient = 22 ± 3		-5	V
Drain-Source Current	IDS	TAmbient = 22 ± 3		2xIDSS	mA
Gate Current	IG	TAmbient = 22 ± 3		15	mA
RF Input Power	PIN	TAmbient = 22 ± 3		750	mW
Channel Operating Temperature	TCH	TAmbient = 22 ± 3		175
Storage Temperature	TSTG	-	-65	175
Total Power Dissipation	PTOT	TAmbient = 22 ± 3		3.33	W

Notes:
` Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device.
` Power Dissipation defined as: P_TOT º (P_DC + P_IN) POUT, where
                                                    P_DC: DC Bias Power
                                                    P_IN: RF Input Power
                                                    P_OUT: RF Output Power
` Absolute Maximum Power Dissipation to be de-rated as follows above 25:
                                              P_TOT= 3.33W (0.022W/) x THS
                                              where THS = heatsink or ambient temperature.


Description

The LP1500 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct- write 0.25 m by 1500 m Schottky barrier gate. The recessed "mushroom" gate structure minimizes parasitic gate-source and gate resistances.  The epitaxial structure and processing have been optimized for reliable high-power applications.  The LP1500 also features Si3N4 passivation and is available in a P100 flanged ceramic package and in the low cost plastic SOT89 package.