Features: · 131,072×8 bit organization· Access times (MAX.): 60/80/100 ns· Cycle times (MIN.): 100/130/160 ns· Single +5 V power supply· Power consumption: Operating: 572/385/275 mW (MAX.) Standby (CMOS level): 1.1 mW (MAX.)· TTL compatible I/O · Available for auto-refresh and self-refresh modes· ...
LH5P8128: Features: · 131,072×8 bit organization· Access times (MAX.): 60/80/100 ns· Cycle times (MIN.): 100/130/160 ns· Single +5 V power supply· Power consumption: Operating: 572/385/275 mW (MAX.) Standby (...
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PARAMETER | SYMBOL | RATING | UNIT | NOTE |
Applied voltage on any pins | VT | -1.0 to +7.0 | V | 1 |
Output short circuit current | IO | 50 | mA | |
Power dissipation |
PD |
600 | mW | |
Operating temperature |
Topr |
0 to +70 |
| |
Storage temperature | Tstg |
55 to +150 |
The LH5P8128 is a 1M bit Pseudo-Static RAM organized as 131,072×8 bits. It is fabricated using silicon-gate CMOS process technology.
A PSRAM uses on-chip refresh circuitry with a DRAM memory cell for pseudo static operation which eliminates external clock inputs, while having the same pinout as industry standard SRAMs. Moreover, due to the functional similarities between PSRAMs and SRAMs, existing 128K ×8 SRAM sockets can be filled with the LH5P8128 with little or no changes. The advantage is the cost savings realized with the lower cost PSRAM.
The LH5P8128 PSRAM has the ability to fill the gap between DRAM and SRAM by offering low cost, low power standby and a simple interface.