LG1626DXC

Stresses in excess of the absolute maximum ratings can cause permanent or latent damage to the device.

These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this device specification. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability.

Absolute Maximum Ratings (at TA = 25 unless otherwise specified)

The LG1626DXC is a gallium-arsenide (GaAs) intergrated circuit used to provide voltages to drive optical modulators in high-speed non-return-to-zero (NRZ) transmission systems. The device is made in a highperformance 0.9 m gate GaAs hetero-junction FET technology that utilizes high-density MIM capacitors, airbridge interconnect, and NiCr film precision resistors.

The LG1626DXC contains four cascaded stages, operates with a single 5.2 V power supply, and accepts ECL 100K level inputs. The output is an open drain designed to drive 50 W loads. Voltages control the output modulation amplitude and modulator dc offset. A 2.5 V band-gap reference is required for stable operation over temperature and varying
power supply voltage. The LG1626DXC is available in a 24-lead hermetic, gull-wing package.