LG1625AXF

Stresses in excess of the absolute maximum ratings can cause permanent or latent damage to the device.

These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this device specification. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability.

Absolute Maximum Ratings (at TA = 25 unless otherwise specified)

The LG1625AXF is a gallium-arsenide (GaAs) laser diode driver to be used with direct modulated laser diodes in high-speed nonreturn-to-zero (NRZ) transmission systems. The device is made in a high-performance 0.9 mm gate GaAs heterojunction FET technology that utilizes high-density MIM capacitors, airbridge interconnect, and NiCr film precision resistors.

The device contains three cascaded stages, operates with a single 5.2 V power supply and accepts ECL level inputs. Voltages control the modulated output current and laser prebias current. The LG1625AXF is available in a 24-lead hermetic, gullwing package.

A test fixture (TF1006A) with SMA connectors is available to allow quick evaluation of the LG1625AXF.