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LET21008

Features: • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION• POUT = 8 W with 11 dB gain @ 2170 MHz / 26V• NEW LEADLESS PLASTIC PACKAGE• ESD PROTECTIONSpecifications Symbol Parameter Value Unit V(BR)DSS Drain-Source Voltage 65 V VGS Gate-Sou...

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SeekIC No. : 004393591 Detail

LET21008: Features: • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION• POUT = 8 W with 11 dB gain @ 2170 MHz / 26V• NEW LEADLESS PLASTIC PACKAGE• ESD PROTECTIONSpecific...

LET21008 Data Sheet

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Part Number:
LET21008
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• POUT = 8 W with 11 dB gain @ 2170 MHz / 26V
• NEW LEADLESS PLASTIC PACKAGE
• ESD PROTECTION


Specifications

Symbol Parameter Value Unit
V(BR)DSS Drain-Source Voltage 65 V
VGS Gate-Source Voltage -0.5 to +15 V
ID Drain Current 2.0 A
PDISS Power Dissipation (@ Tc = 70 °C) TBD W
Tj Max. Operating Junction Temperature 150
TSTG Storage Temperature -65 to +150



Description

The LET21008 is a common source N-Channel,enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 26 V in common source mode at frequencies up to 2.1 GHz. LET21008 boasts the excellent gain,linearity  and  reliability of ST's latest LDMOS technology mounted in the innovative leadless SMD plastic  package,  PowerFLAT™.

LET21008's superior linearity performance makes it  an  ideal  solution   for   base  station applica-tions.




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