Features: • Low-voltage operation: 2.7 to 3.6 V• Wide operating temperature range: 40 to +85°C• Access time:70 ns (maximum):LC35W1000BM and LC35W1000BTS-70U.100 ns (maximum):LC35W1000BM and LC35W1000BTS-10U.• Low current drainStandby mode: 0.1 A (typical*) at Ta = +25°C10.0...
LC35W1000BM: Features: • Low-voltage operation: 2.7 to 3.6 V• Wide operating temperature range: 40 to +85°C• Access time:70 ns (maximum):LC35W1000BM and LC35W1000BTS-70U.100 ns (maximum):LC35W1...
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Characteristic |
Conditions |
Symbol |
Ratings |
Unit |
Maximum supply voltage |
VCCmax |
4.6 |
V | |
Input pin voltage |
VIN |
0.3* to VCC + 0.3 |
V | |
I/O pin voltage |
VI/O |
0.3 to VCC + 0.3 |
V | |
Operating Temperature range |
TOPR |
40 to +85 |
°C | |
Storage temperature range |
TSTG |
55 to +125 |
°C |
Parameter |
Symbol |
Value |
Unit |
Remark |
Input voltage |
Vin |
35 |
V |
- |
Disable voltage |
Vdis |
35 |
V |
- |
The LC35W1000BM and LC35W1000BTS-70U/10U are asynchronous silicon gate CMOS static RAM devices with a 131,072-word by 8-bit structure. They provide two chip enable pins (CE1 and CE2) for device select/deselect control and one output enable pin (OE) for output control. They feature high speed, low power, and a wide operating temperature range.This makes them optimal for use in systems that require high speed, low power, and battery backup. They also support easy memory expansion.