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LC35256FT-70U

Features: • Supply voltage range: 4.5 to 5.5 V• Access time at 5 V operation:LC35256FM, FT-55U: 55 ns (maximum)LC35256FM, FT-70U: 70 ns (maximum)• Standby current: 3.0 A (Ta 70°C)5.0 A (Ta 85°C)• Operating temperature: 40 to +85°C• Data retention voltage: 2.0 to 5.5 ...

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SeekIC No. : 004391594 Detail

LC35256FT-70U: Features: • Supply voltage range: 4.5 to 5.5 V• Access time at 5 V operation:LC35256FM, FT-55U: 55 ns (maximum)LC35256FM, FT-70U: 70 ns (maximum)• Standby current: 3.0 A (Ta 70°C)...

LC35256FT-70U Data Sheet

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Part Number:
LC35256FT-70U
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Supply voltage range: 4.5 to 5.5 V
• Access time at 5 V operation:
LC35256FM, FT-55U: 55 ns (maximum)
LC35256FM, FT-70U: 70 ns (maximum)
• Standby current: 3.0 A (Ta 70°C)
                              5.0 A (Ta 85°C)
• Operating temperature: 40 to +85°C
• Data retention voltage: 2.0 to 5.5 V
• All I/O levels: TTL compatible
• Input/output shared function pins, 3-state output pins
• No clock required
• Package
28-pin SOP (450 mil) plastic package: LC35256FM
28-pin TSOP (8 *13.4 mm) plastic package: LC35256FT


Pinout

Connection Diagram


Specifications

Parameter
Symbol
Conditions
Ratings
Unit
Maximum supply voltage
VCC max
7.0
V
Input pin voltage
VIN
0.3* to VCC + 0.3
V
I/O pin voltage
VI/O
-0.3 to VCC + 0.3
V
Operating temperature
Topr
-40 to +85
°C
Storage temperature
Tstg
-55 to +125
°C
Note: * The minimum value is 3.0 V for pulse widths under 30 ns.


Description

The LC35256FM and LC35256FT-70U are asynchronous silicon-gate CMOS SRAMs with a 32K-word by 8-bit structure. These are full-CMOS devices with 6 transistors per memory cell, and feature low-voltage operation, a low operating current drain, and an ultralow standby current. Control inputs include OE for fast memory access and CE (chip enable) for power saving and device selection. This makes these devices optimal for systems that require low power or battery backup, and makes memory expansion easy. The ultralow standby current allows these devices to be used with capacitor backup as well.




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