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L8801P

Specifications TotalDeviceDissipation Junction toCase ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVoltage Gate toSourceVoltage 30Watts 5.00 /W 150 -65 to 150 3.0A 70V 70V 20VDescriptionSilicon VDMOS and L...

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SeekIC No. : 004389600 Detail

L8801P: Specifications TotalDeviceDissipation Junction toCase ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVoltage Gate toSou...

L8801P Data Sheet

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Part Number:
L8801P
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Specifications

Total
Device
Dissipation		 Junction to
Case Thermal
Resistance		 Maximum
Junction
Temperature		 Storage
Temperature		 DC Drain
Current		 Drain to
Gate
Voltage		 Drain to
Source
Voltage		 Gate to
Source
Voltage
30Watts 5.00 /W 150 -65 to 150 3.0A 70V 70V 20V





Description

Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios,
Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" TMprocess features of the L8801P low feedback and output capacitances resulting in high F transistors with high input impedance and high efficiency.






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