L88016 Selling Leads, Price trend, L88016 DataSheet download, circuit diagram from SeekIC.com

Specifications TotalDeviceDissipation Junction toCase ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVoltage Gate toSourceVoltage 80Watts 1.80 /W 200 -65 to 150 4.5A 70V 70V 20VDescriptionSilicon VDMOS and L...

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L88016: Specifications TotalDeviceDissipation Junction toCase ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVoltage Gate toSou...

L88016 Data Sheet

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Part Number:: L88016
Supply Ability:: 5000

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1~5000

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Negotiable

Processing time
15 Days

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Upload time: 2024/11/26

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Specifications TotalDeviceDissipation Junction toCase ThermalResistance MaximumJunctionTemp...

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Specifications

Total Device Dissipation	Junction to Case Thermal Resistance	Maximum Junction Temperature	Storage Temperature	DC Drain Current	Drain to Gate Voltage	Drain to Source Voltage	Gate to Source Voltage
80Watts	1.80 /W	200	-65 to 150	4.5A	70V	70V	20V

Description

Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios,
Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet"^TM process features of the L88016 low feedback and output capacitances resulting in high F _t ransistors with high input impedance and high efficiency.

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