Features: SpecificationsDescription The L1005-BD is a 5.0-20.0 GHz GaAs MMIC Low Noise Amplifier. The L1005-BD is a Wideband Low Noise Amplifier, 13.0 dB Small Signal Gain, 2.2 dB Noise Figure, 100% On-Wafer RF, DC and Noise Figure Testing, 100% Visual Inspection to MIL-STD-883 Method 2010. Mimix Broadband's single stage 5.0-20.0 GHz GaAs MMIC low noise amplifier has a small signal gain of 13.0 dB with a noise figure of 2.2 dB across the band. This MMIC uses Mimix Broadband's 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.
The Absolute Maximum Ratings of the L1005-BD are Supply Voltage (Vd1)(+5.5 VDC), Supply Current (Id)(120 mA), Gate Bias Voltage (Vg1)(+0.3 VDC), Gate Bias Voltage (Vg2)(TBD), Input Power (Pin)(+15.0 dBm), Storage Temperature (Tstg)(-65 to +165 ), Operating Temperature (Ta)(-55 to MTTF Table1), Channel Temperature (Tch)(MTTF Table1). The Electrical Characteristics (Ambient Temperature T = 25 ) of the L1005-BD are Frequency Range (f)(Min5.0GHzMax20.0GHz), Input Return Loss (S11)(Typ 7.0dB), Output Return Loss (S22)(Typ 14.0dB), Small Signal Gain (S21)(Typ 13.0dB), Gain Flatness (S21)(Typ +/-2.0dB), Reverse Isolation (S12)(Typ TBDdB), Noise Figure (NF)(Typ 2.2dB), Output Power for 1 dB Compression (P1dB)(Typ +16.0dBm), Output Third Order Intercept Point (OIP3)(Typ +26.0dBm), Drain Bias Voltage (Vd)(Typ +5.0VDC), Gate Bias Voltage (Vg1)(Typ -0.3VDC), Gate Bias Voltage (Vg2)(Typ +1.5VDC), Supply Current (Id) (Vd=5.0V, Vg1=-0.3V, Vg2=1.5V)(Typ 30mA).
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L1005-BD Data Sheet
