Features: ·Self Bias Architecture·Small Size·3.0 or 5.0 V Operation·20.0 dB Small Signal Gain·2.0 dB Noise Figure·+9.0 dBm P1dB Compression Point·100% On-Wafer RF, DC and Noise Figure Testing·100% Visual Inspection to MIL-STD-883·Method 2010Specifications Supply Voltage (Vd) +7.0 VDC Supp...
L1000-BD: Features: ·Self Bias Architecture·Small Size·3.0 or 5.0 V Operation·20.0 dB Small Signal Gain·2.0 dB Noise Figure·+9.0 dBm P1dB Compression Point·100% On-Wafer RF, DC and Noise Figure Testing·100% V...
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US $242.55 - 298.52 / Piece
Wirewound Resistors - Chassis Mount 1000watt 100K 5%
Supply Voltage (Vd) | +7.0 VDC |
Supply Current (Id) | 70 mA |
Input Power (Pin) | 12 dBm |
Storage Temperature (Tstg) | -65 to +165 |
Operating Temperature (Ta) | -55 to MTT Table1 |
Channel Temperature (Tch) | MTT Table1 |
Mimix Broadband's three stage 20.0-40.0 GHz GaAs MMIC low noise amplifier has a small signal gain of 20.0 dB with a noise figure of 2.0 dB across the band. This MMIC uses Mimix Broadband's 0.15 m GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip L1000-BD has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. L1000-BD is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.