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KSE181STU

Transistors Bipolar (BJT) NPN Epitaxial Sil

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SeekIC No. : 00210035 Detail

KSE181STU: Transistors Bipolar (BJT) NPN Epitaxial Sil

KSE181STU Data Sheet

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Part Number:
KSE181STU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 60 V
Emitter- Base Voltage VEBO : 7 V Maximum DC Collector Current : 3 A
DC Collector/Base Gain hfe Min : 50 Configuration : Single
Maximum Operating Frequency : 50 MHz Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-126
Packaging : Tube    

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 60 V
Packaging : Tube
Maximum DC Collector Current : 3 A
Emitter- Base Voltage VEBO : 7 V
DC Collector/Base Gain hfe Min : 50
Maximum Operating Frequency : 50 MHz
Package / Case : TO-126


Parameters:

Technical/Catalog InformationKSE181STU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)60V
Current - Collector (Ic) (Max)3A
Power - Max12.5W
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 100mA, 1V
Vce Saturation (Max) @ Ib, Ic300mV @ 50mA, 500mA
Frequency - Transition50MHz
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-126
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names KSE181STU
KSE181STU



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