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KSE13003AS: Transistors Bipolar (BJT) NPN Si Transistor

KSE13003AS Data Sheet

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Part Number:: KSE13003AS
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2024/11/21

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Transistors Bipolar (BJT) NPN Si Transistor

Product Details

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Transistor Polarity :	NPN	Collector- Emitter Voltage VCEO Max :	400 V
Emitter- Base Voltage VEBO :	9 V	Maximum DC Collector Current :	1.5 A
DC Collector/Base Gain hfe Min :	8	Configuration :	Single
Maximum Operating Frequency :	4 MHz	Maximum Operating Temperature :	+ 150 C
Mounting Style :	Through Hole	Package / Case :	TO-126
Packaging :	Bulk

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 400 V
DC Collector/Base Gain hfe Min : 8
Maximum DC Collector Current : 1.5 A
Packaging : Bulk
Package / Case : TO-126
Emitter- Base Voltage VEBO : 9 V
Maximum Operating Frequency : 4 MHz

Parameters:

Technical/Catalog Information	KSE13003AS
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	400V
Current - Collector (Ic) (Max)	1.5A
Power - Max	20W
DC Current Gain (hFE) (Min) @ Ic, Vce	8 @ 500mA, 2V
Vce Saturation (Max) @ Ib, Ic	500mV @ 100mA, 500mA
Frequency - Transition	4MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-126
Packaging	Bulk
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	KSE13003AS KSE13003AS

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KSE13003AS

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