Transistors Bipolar (BJT) NPN Si Transistor
KSE13003H1ASTU: Transistors Bipolar (BJT) NPN Si Transistor
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 400 V |
Emitter- Base Voltage VEBO : | 9 V | Maximum DC Collector Current : | 1.5 A |
DC Collector/Base Gain hfe Min : | 8 | Configuration : | Single |
Maximum Operating Frequency : | 4 MHz | Maximum Operating Temperature : | + 150 C |
Mounting Style : | Through Hole | Package / Case : | TO-126 |
Packaging : | Tube |
Technical/Catalog Information | KSE13003H1ASTU |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 400V |
Current - Collector (Ic) (Max) | 1.5A |
Power - Max | 20W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 9 @ 500mA, 2V |
Vce Saturation (Max) @ Ib, Ic | 500mV @ 100mA, 500mA |
Frequency - Transition | 4MHz |
Current - Collector Cutoff (Max) | - |
Mounting Type | Through Hole |
Package / Case | TO-126 |
Packaging | Tube |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | KSE13003H1ASTU KSE13003H1ASTU |