Transistors Bipolar (BJT) NPN Epitaxial Sil
KSD363R: Transistors Bipolar (BJT) NPN Epitaxial Sil
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 120 V |
Emitter- Base Voltage VEBO : | 8 V | Maximum DC Collector Current : | 6 A |
DC Collector/Base Gain hfe Min : | 40 | Configuration : | Single |
Maximum Operating Frequency : | 10 MHz | Maximum Operating Temperature : | + 150 C |
Mounting Style : | Through Hole | Package / Case : | TO-220 |
Packaging : | Bulk |
Technical/Catalog Information | KSD363R |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 120V |
Current - Collector (Ic) (Max) | 6A |
Power - Max | 40W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 1A, 5V |
Vce Saturation (Max) @ Ib, Ic | 1V @ 100mA, 1A |
Frequency - Transition | 10MHz |
Current - Collector Cutoff (Max) | - |
Mounting Type | Through Hole |
Package / Case | TO-220-3 (Straight Leads) |
Packaging | Bulk |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | KSD363R KSD363R |