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KSD362N: Transistors Bipolar (BJT) NPN Epitaxial Sil

KSD362N Data Sheet

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Part Number:: KSD362N
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2024/11/13

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KSD362 evaluate
Specifications Symbol Parameter Value Units VCBO Collector-Base Voltage 1...
KSD362R evaluate
Transistors Bipolar (BJT) NPN Epitaxial Sil
KSD362RTU evaluate
US $.23 - .27 / Piece

Transistors Bipolar (BJT) NPN Epitaxial Sil

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Transistor Polarity :	NPN	Collector- Emitter Voltage VCEO Max :	70 V
Emitter- Base Voltage VEBO :	8 V	Maximum DC Collector Current :	5 A
DC Collector/Base Gain hfe Min :	20	Configuration :	Single
Maximum Operating Frequency :	10 MHz	Maximum Operating Temperature :	+ 150 C
Mounting Style :	Through Hole	Package / Case :	TO-220
Packaging :	Bulk

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
DC Collector/Base Gain hfe Min : 20
Maximum DC Collector Current : 5 A
Packaging : Bulk
Emitter- Base Voltage VEBO : 8 V
Package / Case : TO-220
Maximum Operating Frequency : 10 MHz
Collector- Emitter Voltage VCEO Max : 70 V

Parameters:

Technical/Catalog Information	KSD362N
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	70V
Current - Collector (Ic) (Max)	5A
Power - Max	40W
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 5A, 5V
Vce Saturation (Max) @ Ib, Ic	1V @ 500mA, 5A
Frequency - Transition	10MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-220-3 (Straight Leads)
Packaging	Bulk
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	KSD362N KSD362N

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KSD362N

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