Transistors Bipolar (BJT) NPN Trip Dif Planar Silicon Transistor
KSC5502DTTU: Transistors Bipolar (BJT) NPN Trip Dif Planar Silicon Transistor
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 600 V |
Emitter- Base Voltage VEBO : | 12 V | Maximum DC Collector Current : | 2 A |
DC Collector/Base Gain hfe Min : | 15 | Configuration : | Single |
Maximum Operating Frequency : | 11 MHz | Maximum Operating Temperature : | + 150 C |
Mounting Style : | SMD/SMT | Package / Case : | TO-252 |
Packaging : | Tube |
Technical/Catalog Information | KSC5502DTTU |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 600V |
Current - Collector (Ic) (Max) | 2A |
Power - Max | 50W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 200mA, 1V |
Vce Saturation (Max) @ Ib, Ic | 1.5V @ 200mA, 1A |
Frequency - Transition | 11MHz |
Current - Collector Cutoff (Max) | 100A |
Mounting Type | Through Hole |
Package / Case | TO-220 |
Packaging | Tube |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | KSC5502DTTU KSC5502DTTU |