KSC5019MBU

Transistors Bipolar (BJT) NPN Si Transistor Epitaxial

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SeekIC No. : 00210637 Detail

KSC5019MBU: Transistors Bipolar (BJT) NPN Si Transistor Epitaxial

floor Price/Ceiling Price

Part Number:
KSC5019MBU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 10 V
Emitter- Base Voltage VEBO : 6 V Maximum DC Collector Current : 2 A
DC Collector/Base Gain hfe Min : 140 Configuration : Single
Maximum Operating Frequency : 150 MHz Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-92
Packaging : Bulk    

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Emitter- Base Voltage VEBO : 6 V
Mounting Style : Through Hole
Package / Case : TO-92
Collector- Emitter Voltage VCEO Max : 10 V
Packaging : Bulk
Maximum Operating Frequency : 150 MHz
Maximum DC Collector Current : 2 A
DC Collector/Base Gain hfe Min : 140


Parameters:

Technical/Catalog InformationKSC5019MBU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)10V
Current - Collector (Ic) (Max)2A
Power - Max750mW
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 500mA, 1V
Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 2A
Frequency - Transition150MHz
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-92
PackagingBulk
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names KSC5019MBU
KSC5019MBU



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