Transistors Bipolar (BJT) NPN Triple Diffused Planar Silicon
KSC5502DTM: Transistors Bipolar (BJT) NPN Triple Diffused Planar Silicon
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 600 V |
Emitter- Base Voltage VEBO : | 12 V | Maximum DC Collector Current : | 2 A |
DC Collector/Base Gain hfe Min : | 14 | Configuration : | Single |
Maximum Operating Frequency : | 11 MHz | Maximum Operating Temperature : | + 150 C |
Mounting Style : | SMD/SMT | Package / Case : | TO-252 |
Packaging : | Reel |
Technical/Catalog Information | KSC5502DTM |
Vendor | Fairchild Semiconductor (VA) |
Category | Discrete Semiconductor Products |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 600V |
Current - Collector (Ic) (Max) | 2A |
Power - Max | 30W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 14 @ 400mA, 1V |
Vce Saturation (Max) @ Ib, Ic | 600mV @ 40mA, 400mA |
Frequency - Transition | 11MHz |
Current - Collector Cutoff (Max) | 100A |
Mounting Type | Surface Mount |
Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
Packaging | Digi-Reel? |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | KSC5502DTM KSC5502DTM KSC5502DTMDKR ND KSC5502DTMDKRND KSC5502DTMDKR |