Transistors Bipolar (BJT) NPN Si Transistor Tripple Diff Planar
KSC5367FTU: Transistors Bipolar (BJT) NPN Si Transistor Tripple Diff Planar
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 800 V | ||
Emitter- Base Voltage VEBO : | 12 V | Maximum DC Collector Current : | 3 A | ||
DC Collector/Base Gain hfe Min : | 12 | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220 | Packaging : | Tube |
Technical/Catalog Information | KSC5367FTU |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 800V |
Current - Collector (Ic) (Max) | 3A |
Power - Max | 40W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 12 @ 400mA, 3V |
Vce Saturation (Max) @ Ib, Ic | 2.5V @ 25mA, 250mA |
Frequency - Transition | - |
Current - Collector Cutoff (Max) | - |
Mounting Type | Through Hole |
Package / Case | TO-220F |
Packaging | Tube |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | KSC5367FTU KSC5367FTU |