Transistors Bipolar (BJT)
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 800 V | ||
Emitter- Base Voltage VEBO : | 12 V | Maximum DC Collector Current : | 3 A | ||
DC Collector/Base Gain hfe Min : | 12 | Maximum Operating Temperature : | + 150 C | ||
Mounting Style : | Through Hole | Package / Case : | TO-220F |
Symbol |
Parameter |
Value |
Units |
VCBO |
Collector-Base Voltage |
1600 |
V |
VCEO |
Collector- Emitter Voltage |
800 |
V |
VEBO |
Emitter-Base Voltage |
12 |
V |
IC |
Collector Current(DC) |
3 |
A |
ICP |
*Collector Current (Pulse) |
6 |
A |
IB |
Base Current(DC) |
2 |
A |
IBP |
*Base Current(Pulse) |
4 |
A |
PC |
Collector Dissipation (Tc=25) |
40 |
W |
TJ |
Junction Temperature |
150 |
|
TSTG |
Storage Temperature |
-65 ~ 150 |