Application• High breakdown Voltage :BVCBO=800V• Built-in Free-wheeling Diode makes efficient anti saturation operation• Suitable for half bridge light ballast Applications• No need to interest an hFE value because of low variable storage-time pread even though corner spiri...
KSC5302DM: Application• High breakdown Voltage :BVCBO=800V• Built-in Free-wheeling Diode makes efficient anti saturation operation• Suitable for half bridge light ballast Applications• ...
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• High breakdown Voltage :BVCBO=800V
• Built-in Free-wheeling Diode makes efficient anti saturation operation
• Suitable for half bridge light ballast Applications
• No need to interest an hFE value because of low variable storage-time pread even though corner spirit product
• Low base drive requirement
Symbol |
Parameter |
Value |
Units |
VCBO |
Collector-Base Voltage |
800 |
V |
VCEO |
Collector- Emitter Voltage |
400 |
V |
VEBO |
Emitter-Base Voltage |
12 |
V |
IC |
Collector Current(DC) |
2 |
A |
ICP |
*Collector Current(Pulse) |
5 |
A |
IB |
Base Current(DC) |
1 |
A |
IBP |
*Base Current (Pulse) |
2 |
A |
PC |
Collector Dissipation (Tc=25) |
25 |
W |
TJ |
Junction Temperature |
150 |
|
TSTG |
Storage Temperature |
-55 ~ 150 |