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KSC5042FYDTU: Transistors Bipolar (BJT) NPN Si Transistor Tripple Diff Planar

KSC5042FYDTU Data Sheet

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Part Number:: KSC5042FYDTU
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2024/12/22

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KSC5019 evaluate
Specifications Symbol Parameter Value Units VCBO Collector-Base Voltage 3...
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Transistors Bipolar (BJT) NPN Si Transistor Epitaxial
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US $.08 - .25 / Piece

Transistors Bipolar (BJT) NPN Epitaxial Transistor

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Quick Details

Transistor Polarity :	NPN	Collector- Emitter Voltage VCEO Max :	900 V
Emitter- Base Voltage VEBO :	5 V	Maximum DC Collector Current :	0.1 A
DC Collector/Base Gain hfe Min :	30	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	TO-220	Packaging :	Tube

Description

Maximum Operating Frequency :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Packaging : Tube
Maximum DC Collector Current : 0.1 A
DC Collector/Base Gain hfe Min : 30
Package / Case : TO-220
Collector- Emitter Voltage VCEO Max : 900 V

Parameters:

Technical/Catalog Information	KSC5042FYDTU
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	900V
Current - Collector (Ic) (Max)	100mA
Power - Max	6W
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic	5V @ 4mA, 20mA
Frequency - Transition	-
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-220F
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	KSC5042FYDTU KSC5042FYDTU

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KSC5042FYDTU

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