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KSC5039H2: Transistors Bipolar (BJT) NPN Sil Transistor

KSC5039H2 Data Sheet

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Part Number:: KSC5039H2
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2024/11/21

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KSC5019 evaluate
Specifications Symbol Parameter Value Units VCBO Collector-Base Voltage 3...
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Transistors Bipolar (BJT) NPN Si Transistor Epitaxial
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US $.08 - .25 / Piece

Transistors Bipolar (BJT) NPN Epitaxial Transistor

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Transistor Polarity :	NPN	Collector- Emitter Voltage VCEO Max :	400 V
Emitter- Base Voltage VEBO :	7 V	Maximum DC Collector Current :	5 A
DC Collector/Base Gain hfe Min :	10	Configuration :	Single
Maximum Operating Frequency :	10 MHz	Maximum Operating Temperature :	+ 150 C
Mounting Style :	Through Hole	Package / Case :	TO-220
Packaging :	Bulk

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 400 V
Emitter- Base Voltage VEBO : 7 V
Maximum DC Collector Current : 5 A
Packaging : Bulk
Package / Case : TO-220
DC Collector/Base Gain hfe Min : 10
Maximum Operating Frequency : 10 MHz

Parameters:

Technical/Catalog Information	KSC5039H2
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	400V
Current - Collector (Ic) (Max)	5A
Power - Max	70W
DC Current Gain (hFE) (Min) @ Ic, Vce	10 @ 300mA, 5V
Vce Saturation (Max) @ Ib, Ic	1.5V @ 50mA, 2.5A
Frequency - Transition	10MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-220-3 (Straight Leads)
Packaging	Bulk
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	KSC5039H2 KSC5039H2

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KSC5039H2

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