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KSC5030FRTU

Transistors Bipolar (BJT) NPN Silicon Transistor

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SeekIC No. : 00210142 Detail

KSC5030FRTU: Transistors Bipolar (BJT) NPN Silicon Transistor

KSC5030FRTU Data Sheet

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Part Number:
KSC5030FRTU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/22

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 800 V
Emitter- Base Voltage VEBO : 7 V Maximum DC Collector Current : 6 A
DC Collector/Base Gain hfe Min : 10 Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-3PF Packaging : Tube    

Description

Maximum Operating Frequency :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Packaging : Tube
Emitter- Base Voltage VEBO : 7 V
Maximum DC Collector Current : 6 A
Collector- Emitter Voltage VCEO Max : 800 V
DC Collector/Base Gain hfe Min : 10
Package / Case : TO-3PF


Parameters:

Technical/Catalog InformationKSC5030FRTU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)800V
Current - Collector (Ic) (Max)6A
Power - Max60W
DC Current Gain (hFE) (Min) @ Ic, Vce8 @ 2A, 5V
Vce Saturation (Max) @ Ib, Ic2V @ 600mA, 3A
Frequency - Transition-
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-3PF
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names KSC5030FRTU
KSC5030FRTU



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