Transistors Bipolar (BJT) NPN Si Transistor
KSC5026MOS: Transistors Bipolar (BJT) NPN Si Transistor
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 800 V |
Emitter- Base Voltage VEBO : | 7 V | Maximum DC Collector Current : | 1.5 A |
DC Collector/Base Gain hfe Min : | 10 | Configuration : | Single |
Maximum Operating Frequency : | 15 MHz | Maximum Operating Temperature : | + 150 C |
Mounting Style : | Through Hole | Package / Case : | TO-126 |
Packaging : | Bulk |
Technical/Catalog Information | KSC5026MOS |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 800V |
Current - Collector (Ic) (Max) | 1.5A |
Power - Max | 20W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 100mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 2V @ 150mA, 750mA |
Frequency - Transition | 15MHz |
Current - Collector Cutoff (Max) | - |
Mounting Type | Through Hole |
Package / Case | TO-126 |
Packaging | Bulk |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | KSC5026MOS KSC5026MOS |