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KSB596O

Transistors Bipolar (BJT) PNP Epitaxial Sil

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SeekIC No. : 00210288 Detail

KSB596O: Transistors Bipolar (BJT) PNP Epitaxial Sil

KSB596O Data Sheet

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Part Number:
KSB596O
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : PNP Collector- Emitter Voltage VCEO Max : 80 V
Emitter- Base Voltage VEBO : - 5 V Maximum DC Collector Current : 4 A
DC Collector/Base Gain hfe Min : 40 Configuration : Single
Maximum Operating Frequency : 3 MHz Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-220
Packaging : Bulk    

Description

Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Emitter- Base Voltage VEBO : - 5 V
Mounting Style : Through Hole
Maximum DC Collector Current : 4 A
Collector- Emitter Voltage VCEO Max : 80 V
Maximum Operating Frequency : 3 MHz
Packaging : Bulk
DC Collector/Base Gain hfe Min : 40
Package / Case : TO-220


Parameters:

Technical/Catalog InformationKSB596O
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypePNP
Voltage - Collector Emitter Breakdown (Max)80V
Current - Collector (Ic) (Max)4A
Power - Max30W
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 500mA, 5V
Vce Saturation (Max) @ Ib, Ic1.7V @ 300mA, 3A
Frequency - Transition3MHz
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)
PackagingBulk
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names KSB596O
KSB596O



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