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KSB546Y

Transistors Bipolar (BJT) PNP Epitaxial Sil

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SeekIC No. : 00210816 Detail

KSB546Y: Transistors Bipolar (BJT) PNP Epitaxial Sil

KSB546Y Data Sheet

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Part Number:
KSB546Y
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : PNP Collector- Emitter Voltage VCEO Max : 150 V
Emitter- Base Voltage VEBO : - 5 V Maximum DC Collector Current : 2 A
DC Collector/Base Gain hfe Min : 40 Configuration : Single
Maximum Operating Frequency : 5 MHz Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-220
Packaging : Bulk    

Description

Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Emitter- Base Voltage VEBO : - 5 V
Mounting Style : Through Hole
Packaging : Bulk
DC Collector/Base Gain hfe Min : 40
Package / Case : TO-220
Maximum DC Collector Current : 2 A
Maximum Operating Frequency : 5 MHz
Collector- Emitter Voltage VCEO Max : 150 V


Parameters:

Technical/Catalog InformationKSB546Y
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypePNP
Voltage - Collector Emitter Breakdown (Max)150V
Current - Collector (Ic) (Max)2A
Power - Max25W
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 400mA, 10V
Vce Saturation (Max) @ Ib, Ic1V @ 50mA, 500mA
Frequency - Transition5MHz
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)
PackagingBulk
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names KSB546Y
KSB546Y



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