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KSB564ACGBU

Transistors Bipolar (BJT) PNP Epitaxial Sil

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SeekIC No. : 00211200 Detail

KSB564ACGBU: Transistors Bipolar (BJT) PNP Epitaxial Sil

KSB564ACGBU Data Sheet

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Part Number:
KSB564ACGBU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : PNP Collector- Emitter Voltage VCEO Max : 25 V
Emitter- Base Voltage VEBO : - 5 V Maximum DC Collector Current : 1 A
DC Collector/Base Gain hfe Min : 70 Configuration : Single
Maximum Operating Frequency : 110 MHz Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-92
Packaging : Bulk    

Description

Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Emitter- Base Voltage VEBO : - 5 V
DC Collector/Base Gain hfe Min : 70
Mounting Style : Through Hole
Package / Case : TO-92
Maximum DC Collector Current : 1 A
Collector- Emitter Voltage VCEO Max : 25 V
Packaging : Bulk
Maximum Operating Frequency : 110 MHz


Parameters:

Technical/Catalog InformationKSB564ACGBU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypePNP
Voltage - Collector Emitter Breakdown (Max)25V
Current - Collector (Ic) (Max)1A
Power - Max800mW
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 100mA, 1V
Vce Saturation (Max) @ Ib, Ic500mV @ 100mA, 1A
Frequency - Transition110MHz
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-92
PackagingBulk
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names KSB564ACGBU
KSB564ACGBU



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