Transistors Bipolar (BJT) PNP Epitaxial Sil
KSA642GBU: Transistors Bipolar (BJT) PNP Epitaxial Sil
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Transistor Polarity : | PNP | Collector- Emitter Voltage VCEO Max : | 25 V | ||
Emitter- Base Voltage VEBO : | - 5 V | Maximum DC Collector Current : | 0.3 A | ||
DC Collector/Base Gain hfe Min : | 70 | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-92 | Packaging : | Bulk |
Technical/Catalog Information | KSA642GBU |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Transistor Type | PNP |
Voltage - Collector Emitter Breakdown (Max) | 25V |
Current - Collector (Ic) (Max) | 300mA |
Power - Max | 400mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 50mA, 1V |
Vce Saturation (Max) @ Ib, Ic | 600mV @ 30mA, 300mA |
Frequency - Transition | - |
Current - Collector Cutoff (Max) | - |
Mounting Type | Through Hole |
Package / Case | TO-92 |
Packaging | Bulk |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | KSA642GBU KSA642GBU |