Transistors Bipolar (BJT) PNP Epitaxial Sil
KSA614O: Transistors Bipolar (BJT) PNP Epitaxial Sil
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Transistor Polarity : | PNP | Collector- Emitter Voltage VCEO Max : | 55 V | ||
Emitter- Base Voltage VEBO : | - 5 V | Maximum DC Collector Current : | 3 A | ||
DC Collector/Base Gain hfe Min : | 40 | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220 | Packaging : | Bulk |
Technical/Catalog Information | KSA614O |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Transistor Type | PNP |
Voltage - Collector Emitter Breakdown (Max) | 55V |
Current - Collector (Ic) (Max) | 3A |
Power - Max | 25W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 500mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 500mV @ 100mA, 1A |
Frequency - Transition | - |
Current - Collector Cutoff (Max) | - |
Mounting Type | Through Hole |
Package / Case | TO-220-3 (Straight Leads) |
Packaging | Bulk |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | KSA614O KSA614O |