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KRF7663

Features: Trench TechnologyUltra Low On-ResistanceP-Channel MOSFETVery Small SOIC PackageLow Profile (< 1.1mm)Available in Tape & ReelPinoutSpecifications Parameter Symbol Ratings Unit Drain-Source Voltage VDS -20 V Continuous Drain Current, VGS @ -4.5V @ Ta = 25 ...

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SeekIC No. : 004387380 Detail

KRF7663: Features: Trench TechnologyUltra Low On-ResistanceP-Channel MOSFETVery Small SOIC PackageLow Profile (< 1.1mm)Available in Tape & ReelPinoutSpecifications Parameter Symbol Ratings ...

KRF7663 Data Sheet

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Part Number:
KRF7663
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Description



Features:

Trench Technology
Ultra Low On-Resistance
P-Channel MOSFET
Very Small SOIC Package
Low Profile (< 1.1mm)
Available in Tape & Reel


Pinout

Connection Diagram


Specifications

Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
-20
V
Continuous Drain Current, VGS @ -4.5V @ Ta = 25
ID
-8.2
A
Continuous Drain Current, VGS @ -4.5V @ Ta = 70
ID
-6.6
Pulsed Drain Current *1
IDM
-66
Power Dissipation @Ta= 25
Power Dissipation @Ta= 70
Linear Derating Factor
PD
1.8
1.15
10
W
mW/
Single Pulse Avalanche Energy *2
EAS
115
mJ
Gate-to-Source Voltage
VGS
±12
V
Junction and Storage Temperature Range
TJ, TSTG
-55 to + 150
Maximum Junction-to-Ambient *3
RJA
70



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