Features: ·Advanced Process Technology·Ultra Low On-Resistance·Dual N and P Channel Mosfet·Surface Mount·Available in Tape & Reel·Dynamic dv/dt Rating·Fast SwitchingSpecifications Parameter Symbol N-Channel P-Channel Unit Continuous Drain Current,VGS@10V , Ta = 25 ...
KRF7105: Features: ·Advanced Process Technology·Ultra Low On-Resistance·Dual N and P Channel Mosfet·Surface Mount·Available in Tape & Reel·Dynamic dv/dt Rating·Fast SwitchingSpecifications Paramet...
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Parameter |
Symbol |
N-Channel |
P-Channel |
Unit |
Continuous Drain Current,VGS@10V , Ta = 25 |
ID |
3.5 |
-2.3 |
A |
Continuous Drain Current ,VGS@10V , Ta = 70 |
ID |
2.8 |
-1.8 | |
Pulsed Drain Current *1 |
IDM |
14 |
-10 | |
Power Dissipation @Ta= 25 |
PD |
2.0 |
W | |
Linear Derating Factor |
0.016 |
|||
Peak Diode Recovery dv/dt *2 | dv/dt | 3.0 | -3.0 | V/ ns |
Gate-to-Source Voltage |
VGS |
±20
|
V | |
Junction and Storage Temperature Range |
TJ, TSTG |
-55 to + 150 |
||
Maximum Junction-to-Ambient *3 |
RJA |
62.5 |
/W |
*1 Repetitive rating; pulse width limited by max. junction temperature.
*2 N-Channel ISD 3.5A, di/dt 90A/ s, VDD V(BR)DSS, TJ 150 P-Channel ISD -2.3A, di/dt 90A/ s, VDD V(BR)DSS, TJ 150
*3 Surface mounted on FR-4 board, t 10sec.