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KRF7307

Features: ·Generation V Technology·Ultra Low On-Resistance·Dual N and P Channel Mosfet·Surface Mount·Available in Tape & Reel·Dynamic dv/dt Rating·Fast SwitchingPinoutSpecifications Parameter Symbol N-Channel P-Channel Unit 10 Sec. Pulse Drain Current, VGS @ 4.5V Ta = 25 ID 5.7 ...

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SeekIC No. : 004387357 Detail

KRF7307: Features: ·Generation V Technology·Ultra Low On-Resistance·Dual N and P Channel Mosfet·Surface Mount·Available in Tape & Reel·Dynamic dv/dt Rating·Fast SwitchingPinoutSpecifications Paramet...

KRF7307 Data Sheet

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Part Number:
KRF7307
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:

·Generation V Technology
·Ultra Low On-Resistance
·Dual N and P Channel Mosfet
·Surface Mount
·Available in Tape & Reel
·Dynamic dv/dt Rating
·Fast Switching




Pinout

Connection Diagram




Specifications

Parameter Symbol N-Channel P-Channel Unit
10 Sec. Pulse Drain Current, VGS @ 4.5V Ta = 25 ID 5.7 -4.7 A
Continuous Drain Current VGS @ 4.5V Ta = 25 ID 5.2 -4.3
Continuous Drain Current VGS @ 4.5V Ta = 70 ID 4.1 -3.4
Pulsed Drain Current *1 IDM 21 -17
Power Dissipation @Ta= 25 PD 2.0 W
Linear Derating Factor (PCB Mount) 0.016 W/
Peak Diode Recovery dv/dt *2 dv/dt 5.0 -5.0 V/ ns
Gate-to-Source Voltage VGS ±12 V
Junction and Storage Temperature Range TJ, TSTG -55 to + 150
Maximum Junction-to-Ambient*3 R JA 62.5 /W
*1 Repetitive rating; pulse width limited by max. junction temperature.
*2 N-Channel ISD 2.6A, di/dt 100A/ s, VDD V(BR)DSS, TJ 150
P-Channel ISD -2.2A, di/dt 50A/ s, VDD V(BR)DSS, TJ 150
*3 Surface mounted on FR-4 board, t 10sec.




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