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KRF7606

Features: Generation V TechnologyUltra Low On-ResistanceP-Channel MOSFETVery Small SOIC PackageLow Profile ( <1.1mm)Available in Tape & ReelFast SwitchingSpecifications Parameter Symbol Ratings Unit Drain-Source Voltage VDS -30 V Continuous Drain Current, VGS @ -4....

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SeekIC No. : 004387378 Detail

KRF7606: Features: Generation V TechnologyUltra Low On-ResistanceP-Channel MOSFETVery Small SOIC PackageLow Profile ( <1.1mm)Available in Tape & ReelFast SwitchingSpecifications Parameter Symbol ...

KRF7606 Data Sheet

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Part Number:
KRF7606
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Description



Features:

Generation V Technology
Ultra Low On-Resistance
P-Channel MOSFET
Very Small SOIC Package
Low Profile ( <1.1mm)
Available in Tape & Reel
Fast Switching


Specifications

Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
-30
V
Continuous Drain Current, VGS @ -4.5V @ Ta = 25
ID
-3.6
A
Continuous Drain Current, VGS @ -4.5V @ Ta = 70
ID
-2.9
Pulsed Drain Current *1
IDM
-29
Power Dissipation @Ta= 25
Power Dissipation @Ta= 70
Linear Derating Factor
PD
1.8
1.1
14
W
Gate-to-Source Voltage
VGS
±20
mW/
Gate-to-Source Voltage Single Pulse tp 10 S
VGSM
30
V
Peak Diode Recovery dv/dt *2
dv/dt
-5.0
V
Junction and Storage Temperature Range
TJ, TSTG
-55 to + 150
Maximum Junction-to-Ambient *3
RJA
70
/W



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