Features: Trench TechnologyUltra Low On-ResistanceDual N-Channel MOSFETVery Small SOIC PackageLow Profile ( 1.1mm)Available in Tape & ReelPinoutSpecifications Parameter Symbol Ratings Unit Drain-Source Voltage VDS 20 V Continuous Drain Current, VGS @ -4.5V @ Ta = 2...
KRF7530: Features: Trench TechnologyUltra Low On-ResistanceDual N-Channel MOSFETVery Small SOIC PackageLow Profile ( 1.1mm)Available in Tape & ReelPinoutSpecifications Parameter Symbol Ratings...
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Parameter |
Symbol |
Ratings |
Unit |
Drain-Source Voltage |
VDS |
20 |
V |
Continuous Drain Current, VGS @ -4.5V @ Ta = 25 |
ID |
5.4 |
A |
Continuous Drain Current, VGS @ -4.5V @ Ta = 70 |
ID |
4.3 | |
Pulsed Drain Current *1 |
IDM |
40 | |
Power Dissipation @Ta= 25 Power Dissipation @Ta= 70 Linear Derating Factor |
PD |
1.3 0.8 10 |
m W/ |
Single Pulse Avalanche Energy *2 |
EAS |
33 |
mJ |
Gate-to-Source Voltage |
VGS |
±20 |
mW/ |
Junction and Storage Temperature Range |
TJ, TSTG |
-55 to + 150 |
|
Maximum Junction-to-Ambient *3 |
RJA |
100 |
/W |