Position: Home  > All Categories> Integrated Circuits (ICs) > KRF7509

KRF7509

Features: Generation V TechnologyUltra Low On-ResistanceDual N and P Channel MOSFETVery Small SOIC PackageLow Profile (<1.1mm)Available in Tape & ReelFast SwitchingPinoutSpecifications Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage VDS 30 -30 ...

product image

KRF7509 Picture
See larger image
SeekIC No. : 004387372 Detail

KRF7509: Features: Generation V TechnologyUltra Low On-ResistanceDual N and P Channel MOSFETVery Small SOIC PackageLow Profile (<1.1mm)Available in Tape & ReelFast SwitchingPinoutSpecifications P...

KRF7509 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
KRF7509
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/23

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

Generation V Technology
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Very Small SOIC Package
Low Profile (<1.1mm)
Available in Tape & Reel
Fast Switching




Pinout

Connection Diagram




Specifications

Parameter
Symbol
N-Channel
P-Channel
Unit
Drain-Source Voltage
VDS
30
-30
V
Continuous Drain Current, VGS @ 10V @ Ta = 25
ID
2.7
-2
A
Continuous Drain Current, VGS @ 10V @ Ta = 70
ID
2.1
-16
Pulsed Drain Current *1
IDM
21
-16
Power Dissipation @Ta= 25
Power Dissipation @Ta= 70
Linear Derating Factor
PD
1.25
10
0.8
m
W/

Gate-to-Source Voltage
VGS
±20
V
Gate-to-Source Voltage Single Pulse tp<10S
VGSM
30
Peak Diode Recovery dv/dt *2
dv/dt
5.0
V/ns
Junction and Storage Temperature Range
TJ, TSTG
-55 to + 150
Maximum Junction-to-Ambient *3
RJA
100
/W





Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Inductors, Coils, Chokes
DR127-330-R
SD53-100-R
Batteries, Chargers, Holders
ICR18650-28A
ICR18650-26F/h
Isolators
HCPL062N
HCPL316J
Cables, Wires - Management
NM-SF50+
CCK26.5-MM-190-30
Prototyping Products
AVT4168
DE1
Cable Assemblies
CS1W-CN114
XW2Z-500T
View more