Features: Generation V TechnologyUltra Low On-ResistanceDual N and P Channel MOSFETVery Small SOIC PackageLow Profile (<1.1mm)Available in Tape & ReelFast SwitchingPinoutSpecifications Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage VDS 20 -20 ...
KRF7507: Features: Generation V TechnologyUltra Low On-ResistanceDual N and P Channel MOSFETVery Small SOIC PackageLow Profile (<1.1mm)Available in Tape & ReelFast SwitchingPinoutSpecifications P...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Parameter |
Symbol |
N-Channel |
P-Channel |
Unit |
Drain-Source Voltage |
VDS |
20 |
-20 |
V |
Continuous Drain Current, VGS @ 10V @ Ta = 25 |
ID |
2.4 |
-1.7 |
A |
Continuous Drain Current, VGS @ 10V @ Ta = 70 |
ID |
1.9 |
-1.4 | |
Pulsed Drain Current *1 |
IDM |
21 |
-14 | |
Power Dissipation @Ta= 25 Power Dissipation @Ta= 70 Linear Derating Factor |
PD |
1.25 0.8 10 |
m W/ | |
Gate-to-Source Voltage |
VGS |
±12 |
V | |
Gate-to-Source Voltage Single Pulse tp<10S |
VGSM |
16 |
V | |
Peak Diode Recovery dv/dt *2 |
dv/dt |
5.0 |
-5.0 |
V/ns |
Junction and Storage Temperature Range |
TJ, TSTG |
-55 to + 150 |
||
Maximum Junction-to-Ambient *3 |
RJA |
100 |
/W |