Features: ·Generation V Technology·Ulrtra Low On-Resistance·Dual N-Channel MOSFET·Very Small SOIC Package·Low Profile ( 1.1mm)·Available in Tape & Reel·Fast SwitchingPinoutSpecifications Parameter Symbol Rating Unit Drain-Source Voltage VDS 20 V Continuous Drain ...
KRF7501: Features: ·Generation V Technology·Ulrtra Low On-Resistance·Dual N-Channel MOSFET·Very Small SOIC Package·Low Profile ( 1.1mm)·Available in Tape & Reel·Fast SwitchingPinoutSpecifications ...
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Parameter |
Symbol |
Rating |
Unit |
Drain-Source Voltage |
VDS |
20 |
V |
Continuous Drain Current, VGS @ 10V,Ta = 25 |
ID |
2.4 |
A |
Continuous Drain Current, VGS @ 10V,TA = 70 |
ID |
1.9 | |
Pulsed Drain Current*1 |
IDM |
19 | |
Power Dissipation Ta = 25 *1 |
PD |
1.25 |
W |
Power Dissipation Ta = 70*1 |
PD |
0.8 |
W |
Linear Derating Factor |
0.01 |
/W | |
Gate-to-Source Voltage Single Pulse tp 10 s |
VGSM |
16 |
V |
Gate-to-Source Voltage |
VGS |
±12 |
V |
Peak Diode Recovery dv/dt*1 |
dv/dt |
5 |
V/ns |
Junction and Storage Temperature Range |
Tj,Tstg |
-55 to150 |
|
Junction-to-Ambient *2 |
RJA |
100 |
/W |