Position: Home  > All Categories> Integrated Circuits (ICs) > KRF7343

KRF7343

Features: ·Generation V Technology·Ultra Low On-Resistance·Dual N and P Channel MOSFET·Surface Mount·Fully Avalanche RatedPinoutSpecifications Parameter Symbol N-Channel P-Channel Unit Continuous Drain Current,VGS@10V , Ta = 25 ID 4.7 -3.4 A Continuous Drain Current,VGS@10V , Ta...

product image

KRF7343 Picture
See larger image
SeekIC No. : 004387364 Detail

KRF7343: Features: ·Generation V Technology·Ultra Low On-Resistance·Dual N and P Channel MOSFET·Surface Mount·Fully Avalanche RatedPinoutSpecifications Parameter Symbol N-Channel P-Channel Unit C...

KRF7343 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
KRF7343
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/23

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

·Generation V Technology
·Ultra Low On-Resistance
·Dual N and P Channel MOSFET
·Surface Mount
·Fully Avalanche Rated




Pinout

Connection Diagram




Specifications

Parameter Symbol N-Channel P-Channel Unit
Continuous Drain Current,VGS@10V , Ta = 25 ID 4.7 -3.4 A
Continuous Drain Current,VGS@10V , Ta = 70 ID 3.8 -2.7
Pulsed Drain Current*1 IDM 38 -27
Power Dissipation @Ta= 25 *5 PD 2.0 W
Power Dissipation @Ta= 70 *5 1.3 W
Gate-to-Source Voltage VGS ±20 ±20 V
Drain-Source Voltage VDS 55 -55 V
Operating Junction and Storage Temperature Range TJ,TSTG -55 to + 150
Repetitive Avalanche Energy EAR 0.20 mJ
Junction-to-Ambient*5 RJA 62.5 /W
Peak Diode Recovery dv/dt *2 dv/dt 5.0 -5.0 V/ ns
Single Pulse Avalanche Energy*3 EAS 72 114 mJ
Avalanche Current IAR 4.7 -3.4 A
*1 Repetitive rating; pulse width limited by max. junction temperature.
*2 N-Channel ISD 4.7A, di/dt 220A/ s, VDD V(BR)DSS, TJ 150
P-Channel ISD -3.4A, di/dt -150A/ s, VDD V(BR)DSS, TJ 150
*3 N-Channel Starting TJ = 25 , L = 6.5mH RG = 25 , IAS= 4.7A.
P-Channel Starting TJ = 25 , L = 20mH RG = 25 , IAS = -3.4A.
*5 Surface mounted on FR-4 board, t 10sec.
*4 Pulse width 300 s; duty cycle 2%.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Kits
IT243
UVSC-110-4E1
Potentiometers, Variable Resistors
RV24YN
WXD4-23-3W
Memory Cards, Modules
WT32
VTL5C7
Isolators
HCPL062N
HCPL316J
Integrated Circuits (ICs)
TA8435H
1MB12-140
Transformers
TM-09210
BV222-1-00992
View more