Features: ·Generation V Technology·Ultra Low On-Resistance·Dual N and P Channel MOSFET·Surface Mount·Fully Avalanche RatedSpecifications Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage VDS 30 -30 A Continuous Drain Current *5 Ta = 25 ID 6.5 -4.9 Continuous D...
KRF7319: Features: ·Generation V Technology·Ultra Low On-Resistance·Dual N and P Channel MOSFET·Surface Mount·Fully Avalanche RatedSpecifications Parameter Symbol N-Channel P-Channel Unit Drain-S...
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Parameter | Symbol | N-Channel | P-Channel | Unit |
Drain-Source Voltage | VDS | 30 | -30 | A |
Continuous Drain Current *5 Ta = 25 | ID | 6.5 | -4.9 | |
Continuous Drain Current *5 Ta = 70 | ID | 5.2 | -3.9 | |
Pulsed Drain Current | IDM | 30 | -30 | |
Continuous Source Current (Diode Conduction) | IS | 2.5 | -2.5 | A |
Power Dissipation @Ta= 25 *4 | PD | 20 | W | |
Power Dissipation @Ta= 70 *4 | 1.3 | W | ||
Single Pulse Avalanche Energy | EAS | 82 | 140 | mJ |
Avalanche Current | IAR | 40 | -2.8 | V |
Repetitive Avalanche Energy | EAR | 0.20 | mJ | |
Peak Diode Recovery dv/dt *2 | dv/dt | 5.0 | -5 | V/ ns |
Gate-to-Source Voltage | VGS | ±20 | V | |
Junction and Storage Temperature Range | TJ, TSTG | -55 to + 150 | ||
Maximum Junction-to-Ambient*4 | RJA | 62.5 | /W |