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KRF7317

Features: ·Generation V Technology·Ultra Low On-Resistance·Dual N and P Channel MOSFET·Surface Mount·Fully Avalanche RatedPinoutSpecifications Parameter Symbol N-Channel P-Channel Unit Continuous Drain Current Ta = 25 ID 6.6 -5.3 A Continuous Drain Current Ta = 70 ID 5.3 -4.3...

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SeekIC No. : 004387360 Detail

KRF7317: Features: ·Generation V Technology·Ultra Low On-Resistance·Dual N and P Channel MOSFET·Surface Mount·Fully Avalanche RatedPinoutSpecifications Parameter Symbol N-Channel P-Channel Unit C...

KRF7317 Data Sheet

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Part Number:
KRF7317
Supply Ability:
5000

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  • Processing time
  • 15 Days
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Product Details

Description



Features:

·Generation V Technology
·Ultra Low On-Resistance
·Dual N and P Channel MOSFET
·Surface Mount
·Fully Avalanche Rated




Pinout

Connection Diagram




Specifications

Parameter Symbol N-Channel P-Channel Unit
Continuous Drain Current Ta = 25 ID 6.6 -5.3 A
Continuous Drain Current Ta = 70 ID 5.3 -4.3
Pulsed Drain Current IDM 26 -21
Continuous Source Current (Diode Conduction) IS 25 -2.5 A
Power Dissipation @Ta= 25 *2 PD 2.0 W
Power Dissipation @Ta= 70 *2 1.3 W
Gate-to-Source Voltage VGS ±12 ±12 V
Drain-Source Voltage VDS 20 -20 V
Operating Junction and Storage Temperature Range TJ,TSTG -55 to + 150
Repetitive Avalanche Energy EAR 0.20 mJ
Junction-to-Ambient RJA 62.5 /W
Peak Diode Recovery dv/dt *1 dv/dt 5.0 -5 V/ ns
Single Pulse Avalanche Energy EAS 100 150 mJ
Avalanche Current *2 IAR 4.1 -2.9 A
*1 N-Channel ISD 4.1A, di/dt 92A/ s, VDD V(BR)DSS, TJ 150
P-Channel ISD -2.9A, di/dt -77A/ s, VDD V(BR)DSS, TJ 150
*2 Surface mounted on FR-4 board, t 10sec.




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