KRF7313

Features: ·Generation V Technology·Ultra Low On-Resistance·Dual N-Channel Mosfet·Surface Mount·Fully Avalanche RatedPinoutSpecifications Parameter Symbol Rating Units Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current, Ta = 25 *3 ID 6.5 A...

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KRF7313 Picture
SeekIC No. : 004387359 Detail

KRF7313: Features: ·Generation V Technology·Ultra Low On-Resistance·Dual N-Channel Mosfet·Surface Mount·Fully Avalanche RatedPinoutSpecifications Parameter Symbol Rating Units Drain-Source Voltage...

floor Price/Ceiling Price

Part Number:
KRF7313
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Description



Features:

·Generation V Technology
·Ultra Low On-Resistance
·Dual N-Channel Mosfet
·Surface Mount
·Fully Avalanche Rated



Pinout

  Connection Diagram


Specifications

Parameter Symbol Rating Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current, Ta = 25 *3 ID 6.5 A
Continuous Drain Current,TC = 70 *3 ID 30 A
Pulsed Drain Current IDM 2.5 A
Maximum Power Dissipation Ta = 25 *3 PD 2 W
Maximum Power Dissipation Ta = 70 *3 1.3 W
Single Pulse Avalanche Energy *4 EAS 82 mJ
Operating Junction and Storage Temperature Range TJ,Tstg -55 to 150
Avalanche Current IAR 4 A
Repetitive Avalanche Energy EAR 0.2 mJ
Peak Diode Recovery dv/dt*2 dv/dt 5.8 V/ns
Maximum Junction-to-Ambient *3 RJA 62.5 /W
*1 Repetitive rating; pulse width limited by max. junction temperature.
*2 ISD 4.0A, di/dt 74A/ s, VDD V(BR)DSS,TJ 150
*3 Surface mounted on FR-4 board, t 10sec.
*4 Starting TJ=25 ,L=10mH,RG=25 , IAS=4.0A



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