Features: `5.0A, 600 V. R DS(ON) = 2.0 @ VGS = 10 V`Low gate charge (typical 16nC)`Low Crss(typical 9.0pF)`Fast switching`100% avalanche tested`lmproved dv/dt capabilitySpecifications Parameter Symbol Rating Unit Drain to Source Voltage VDSS 600 V Drain Current C...
KQB5N60: Features: `5.0A, 600 V. R DS(ON) = 2.0 @ VGS = 10 V`Low gate charge (typical 16nC)`Low Crss(typical 9.0pF)`Fast switching`100% avalanche tested`lmproved dv/dt capabilitySpecifications Paramet...
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Parameter |
Symbol |
Rating |
Unit |
Drain to Source Voltage |
VDSS |
600 |
V |
Drain Current Continuous (TC=25) |
ID |
5 |
A |
Drain Current Continuous (TC=100) |
3.15 |
A | |
Drain Current Pulsed *1 |
IDM |
24.8 |
A |
Gate-Source Voltage |
VGSS |
±30 |
V |
Single Pulsed Avalanche Energy*2 |
EAS |
300 |
mJ |
Avalanche Current *1 |
IAR |
5 |
A |
Repetitive Avalanche Energy *1 |
EAR |
12 |
mJ |
Peak Diode Recovery dv/dt *3 |
dv/dt |
4.5 |
V/ns |
Power dissipation @ TA=25 |
PD |
3.13 |
W |
Power dissipation @ TC=25 Derate above 25 |
PD |
120 |
W |
0.96 |
W/ | ||
Operating and Storage Temperature |
TJ, TSTG |
-55 to150 |
|
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds |
TL |
300 |
|
Thermal Resistance Junction to Case |
RJC |
1.04 |
/W |
Thermal Resistance Junction to Ambient *4 |
RJA |
40 |
/W |
Thermal Resistance Junction to Ambient |
RJA |
62.5 |
/W |