Features: `4.5A, 200 V. RDS(ON) = 1.2 @ VGS = 10 V`Low gate charge (typical 6.0nC)`Low Crss(typical 6.0pF)`Fast switching`100% avalanche tested`lmproved dv/dt capabilitySpecifications Parameter Symbol Rating Unit Drain to Source Voltage VDSS 200 V Drain Current C...
KQB5N20: Features: `4.5A, 200 V. RDS(ON) = 1.2 @ VGS = 10 V`Low gate charge (typical 6.0nC)`Low Crss(typical 6.0pF)`Fast switching`100% avalanche tested`lmproved dv/dt capabilitySpecifications Paramet...
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Parameter |
Symbol |
Rating |
Unit |
Drain to Source Voltage |
VDSS |
200 |
V |
Drain Current Continuous (TC=25 ) |
ID |
4.5 |
A |
Drain Current Continuous (TC=100 ) |
2.8 |
A | |
Drain Current Pulsed *1 |
IDM |
18 |
A |
Gate-Source Voltage |
VGSS |
±30 |
V |
Single Pulsed Avalanche Energy*2 |
EAS |
60 |
mJ |
Avalanche Current *1 |
IAR |
4.5 |
A |
Repetitive Avalanche Energy *1 |
EAR |
5.2 |
mJ |
Peak Diode Recovery dv/dt *3 |
dv/dt |
5.5 |
V/ns |
Power dissipation @ TA=25 |
PD |
3.13 |
W |
Power dissipation @ TC=25 Derate above 25 |
PD |
52 |
W |
0.42 |
W/ | ||
Operating and Storage Temperature |
TJ, TSTG |
-55 to150 |
|
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds |
TL |
300 |
|
Thermal Resistance Junction to Case |
RJA |
2.4 |
/W |
Thermal Resistance Junction to Ambient *4 |
RJC |
40 |
/W |
Thermal Resistance Junction to Ambient |
RJC |
62.5 |
/W |