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KQB3N40

Features: `2.5A, 400 V. R DS(ON) = 3.4 @ VGS = 10 V`Low gate charge (typical 6.0nC)`Low Crss(typical 4.2pF)`Fast switching`100% avalanche tested`lmproved dv/dt capabilitySpecifications Parameter Symbo Rating Unit Drain to Source Voltage VDSS 400 V Drain Current ...

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SeekIC No. : 004386819 Detail

KQB3N40: Features: `2.5A, 400 V. R DS(ON) = 3.4 @ VGS = 10 V`Low gate charge (typical 6.0nC)`Low Crss(typical 4.2pF)`Fast switching`100% avalanche tested`lmproved dv/dt capabilitySpecifications Param...

KQB3N40 Data Sheet

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Part Number:
KQB3N40
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

`2.5A, 400 V. R DS(ON) = 3.4 @ VGS = 10 V
`Low gate charge (typical 6.0nC)
`Low Crss(typical 4.2pF)
`Fast switching
`100% avalanche tested
`lmproved dv/dt capability


Specifications

Parameter
Symbo
Rating
Unit
Drain to Source Voltage
VDSS
400
V
Drain Current Continuous (TC=25 )
ID
2.5
A
Drain Current Continuous (TC=100 )
1.58
A
Drain Current Pulsed *1
IDM
10
A
Gate-Source Voltage
VGSS
±30
V
Single Pulsed Avalanche Energy*2
EAS
125
mJ
Avalanche Current *1
IAR
2.5
A
Repetitive Avalanche Energy *1
EAR
5.5
mJ
Peak Diode Recovery dv/dt *3
dv/dt
4.5
W
Power dissipation @ TA=25
PD
3.13
W
Power dissipation @ TC=25
Derate above 25
PD
55
W/
0.44
Operating and Storage Temperature
TJ, TSTG
-55 to150
Maximum lead temperature for soldering
purposes,1/8" from case for 5 seconds
TL
300
Thermal Resistance Junction to Case
RJC
2.27
/W
Thermal Resistance Junction to Ambient *4
RJC
40
/W
Thermal Resistance Junction to Ambient
RJC
62.5
/W
*1 Repetitive Rating:Pulse width limited by maximum junction temperature
*2 l=34mH,IAS=2.5A,VDD=50V,RG=25 ,Startion TJ=25
*3 ISD 2.5A,di/dt 200A/ ,VDD BVDSS,Startiong TJ=25
*4 When mounted on the minimum pad size recommended (PCB Mount)


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