Features: ·Low on-resistance.·Built-in G-S Protection Diode.·Small and Surface Mount Package.·Power switching, DC / DC converter.Specifications Parameter Symbol N-Channel P-channel Unit Drain-source voltage VDSS 30 -30 V Gate-source voltage VGSS 20 -20 V Drain current Con...
KP8M9: Features: ·Low on-resistance.·Built-in G-S Protection Diode.·Small and Surface Mount Package.·Power switching, DC / DC converter.Specifications Parameter Symbol N-Channel P-channel Unit ...
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Parameter | Symbol | N-Channel | P-channel | Unit |
Drain-source voltage | VDSS | 30 | -30 | V |
Gate-source voltage | VGSS | 20 | -20 | V |
Drain current Continuous | ID | ±9.0 | ±5.0 | A |
Drain current Pulsed * | IDP | ±36 | ±20 | |
Source current (Body diode) Continuous | IS | 1.6 | -1.6 | A |
Source current (Body diode) Pulsed * | ISP | 36 | -20 | A |
Total power dissipation | PD | 2 | W | |
Channel to ambient | Rth(ch-a) | 62.5 | /W | |
Channel Temperature | Tch | 150 | ||
Storage Temperature | Tstg | -55 to +150 |